NTBS2D7N06M7 Specs and Replacement

Type Designator: NTBS2D7N06M7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 1745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: D2PAK

NTBS2D7N06M7 substitution

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NTBS2D7N06M7 datasheet

 ..1. Size:232K  onsemi
 ntbs2d7n06m7.pdf pdf_icon

NTBS2D7N06M7

NTBS2D7N06M7 N Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features www.onsemi.com Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A D UIS Capability These Devices are Pb-Free and are RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation S Battery ... See More ⇒

Detailed specifications: NTBG160N120SC1, NTBGS4D1N15MC, NTBGS6D5N15MC, NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, AO4468, NTBS9D0N10MC, NTBV5605, NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F

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