NTBS2D7N06M7 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTBS2D7N06M7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 1745 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: D2PAK
NTBS2D7N06M7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTBS2D7N06M7 Datasheet (PDF)
..1. Size:232K onsemi
ntbs2d7n06m7.pdf
ntbs2d7n06m7.pdf
NTBS2D7N06M7NChannel PowerTrench)MOSFET60 V, 110 A, 2.7 mWFeatureswww.onsemi.com Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 AD UIS Capability These Devices are Pb-Free and are RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial AutomationS Battery
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
