All MOSFET. NTD360N80S3Z Datasheet

 

NTD360N80S3Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD360N80S3Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.3 nC
   trⓘ - Rise Time: 18.5 nS
   Cossⓘ - Output Capacitance: 18.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: DPAK

 NTD360N80S3Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD360N80S3Z Datasheet (PDF)

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 ntd360n80s3z.pdf

NTD360N80S3Z NTD360N80S3Z

MOSFET Power,N-Channel, SUPERFET) III800 V, 360 mW, 13 ANTD360N80S3ZDescriptionwww.onsemi.com800 V SUPERFET III MOSFET is ON Semiconductors highperformance MOSFET family offering 800 V breakdown voltage.New 800 V SUPERFET III MOSFET which is optimized forV(BR)DSS RDS(ON) MAX ID MAXprimary switch of flyback converter, enables lower switching lossesand case temperatur

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