NTD360N80S3Z Specs and Replacement

Type Designator: NTD360N80S3Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.5 nS

Cossⓘ - Output Capacitance: 18.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: DPAK

NTD360N80S3Z substitution

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NTD360N80S3Z datasheet

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NTD360N80S3Z

MOSFET Power, N-Channel, SUPERFET) III 800 V, 360 mW, 13 A NTD360N80S3Z Description www.onsemi.com 800 V SUPERFET III MOSFET is ON Semiconductor s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for V(BR)DSS RDS(ON) MAX ID MAX primary switch of flyback converter, enables lower switching losses and case temperatur... See More ⇒

Detailed specifications: NTBLS001N06C, NTBLS002N08MC, NTBLS0D7N06C, NTBLS1D5N08MC, NTBLS4D0N15MC, NTBS2D7N06M7, NTBS9D0N10MC, NTBV5605, IRF3205, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F, NTH4L040N120SC1

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