All MOSFET. NTD5C446N Datasheet

 

NTD5C446N Datasheet and Replacement


   Type Designator: NTD5C446N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DPAK
 

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NTD5C446N Datasheet (PDF)

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NTD5C446N

NTD5C446NPower MOSFET40 V, 3.5 mW, 110 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) IDMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 3.5 mW @ 10 V 110 AParameter Symbol Value Unit

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NTD5C446N

NTD5C668NLPower MOSFET60 V, 8.9 mW, 48 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID8.9 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)60 V 49 A12.8 mW @ 4.5 VParameter S

Datasheet: NTBLS0D7N06C , NTBLS1D5N08MC , NTBLS4D0N15MC , NTBS2D7N06M7 , NTBS9D0N10MC , NTBV5605 , NTD360N80S3Z , NTD4979N , IRF840 , NTD5C668NL , NTDV18N06L , NTH027N65S3F , NTH4L020N120SC1 , NTH4L027N65S3F , NTH4L040N120SC1 , NTH4L040N65S3F , NTH4L080N120SC1 .

History: NCE5015S | HM4423 | STT3471P | WML28N65C4 | CEB7030L | IRFPG40 | FQP7P20

Keywords - NTD5C446N MOSFET datasheet

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