NTDV18N06L Datasheet and Replacement
Type Designator: NTDV18N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: DPAK
NTDV18N06L Datasheet (PDF)
ntd18n06l ntdv18n06l.pdf

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T
ntd18n06lg ntdv18n06lt4g.pdf

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)
Datasheet: NTBLS4D0N15MC , NTBS2D7N06M7 , NTBS9D0N10MC , NTBV5605 , NTD360N80S3Z , NTD4979N , NTD5C446N , NTD5C668NL , IRF540 , NTH027N65S3F , NTH4L020N120SC1 , NTH4L027N65S3F , NTH4L040N120SC1 , NTH4L040N65S3F , NTH4L080N120SC1 , NTH4L160N120SC1 , NTHD4P02F .
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