NTH027N65S3F Specs and Replacement

Type Designator: NTH027N65S3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 595 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0274 Ohm

Package: TO-247

NTH027N65S3F substitution

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NTH027N65S3F datasheet

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NTH027N65S3F

NTH027N65S3F Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 75 A, 27.4 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored to ... See More ⇒

Detailed specifications: NTBS2D7N06M7, NTBS9D0N10MC, NTBV5605, NTD360N80S3Z, NTD4979N, NTD5C446N, NTD5C668NL, NTDV18N06L, IRF540, NTH4L020N120SC1, NTH4L027N65S3F, NTH4L040N120SC1, NTH4L040N65S3F, NTH4L080N120SC1, NTH4L160N120SC1, NTHD4P02F, NTHL020N090SC1

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