NTH027N65S3F MOSFET. Datasheet pdf. Equivalent
Type Designator: NTH027N65S3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 595 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 259 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0274 Ohm
Package: TO-247
NTH027N65S3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTH027N65S3F Datasheet (PDF)
..1. Size:348K onsemi
nth027n65s3f.pdf
nth027n65s3f.pdf
NTH027N65S3FPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to
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