All MOSFET. NTH027N65S3F Datasheet

 

NTH027N65S3F Datasheet and Replacement


   Type Designator: NTH027N65S3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 595 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0274 Ohm
   Package: TO-247
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NTH027N65S3F Datasheet (PDF)

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NTH027N65S3F

NTH027N65S3FPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to

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