All MOSFET. STP5N80XI Datasheet

 

STP5N80XI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP5N80XI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: ISOWATT221

 STP5N80XI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP5N80XI Datasheet (PDF)

Datasheet: STP5N30L , STP5N30LFI , STP5N50 , STP5N50FI , STP5N60 , STP5N60FI , STP5N80 , STP5N80FI , IRLB4132 , STP5N90 , STP5N90FI , STP5NA50 , STP5NA50FI , STP5NA60 , STP5NA60FI , STP5NA80 , STP5NA80FI .

 

 
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