MTMC8E2A0LBF Specs and Replacement

Type Designator: MTMC8E2A0LBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 700 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: WMINI8-F1 SC-115

MTMC8E2A0LBF substitution

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MTMC8E2A0LBF datasheet

 ..1. Size:279K  panasonic
 mtmc8e2a0lbf.pdf pdf_icon

MTMC8E2A0LBF

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit mm 2.9 For lithium-ion secondary battery protection circuit 0.3 0.16 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 com... See More ⇒

 6.1. Size:434K  panasonic
 mtmc8e2a.pdf pdf_icon

MTMC8E2A0LBF

This product complies with the RoHS Directive (EU 2002/95/EC). MTMC8E2A Silicon N-channel MOS FET For lithium-ion secondary battery protection circuit Overview Package The MTMC8E2A is the low ON resistance dual N-channel MOS FET Code designed for lithium-ion secondary battery protection circuit. WMini8-F1 Package dimension clicks here. Click! Features Low drain-... See More ⇒

Detailed specifications: NTHS5441, NTLJS17D0P03P8Z, NTLUD3A260PZ, NTLUS3A40PZ, NTMD6P02R2, NTMFD016N06C, FCAB21490L1, FCAB21520L1, IRFP260, NTMFD020N06C, NTMFD024N06C, NTMFD030N06C, NTMFD4C50N, NTMFD5875NL, NTMFD5C446NL, NTMFD5C466N, NTMFD5C466NL

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