All MOSFET. MTMC8E2A0LBF Datasheet

 

MTMC8E2A0LBF Datasheet and Replacement


   Type Designator: MTMC8E2A0LBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 700 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: WMINI8-F1 SC-115
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MTMC8E2A0LBF Datasheet (PDF)

 ..1. Size:279K  panasonic
 mtmc8e2a0lbf.pdf pdf_icon

MTMC8E2A0LBF

Doc No. TT4-EA-12100Revision. 2Product StandardsMOS FETMTMC8E2A0LBFMTMC8E2A0LBFGate Resistor installed Dual N-Channel MOS TypUnit: mm 2.9For lithium-ion secondary battery protection circuit0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 com

 6.1. Size:434K  panasonic
 mtmc8e2a.pdf pdf_icon

MTMC8E2A0LBF

This product complies with the RoHS Directive (EU 2002/95/EC).MTMC8E2ASilicon N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageThe MTMC8E2A is the low ON resistance dual N-channel MOS FET Codedesigned for lithium-ion secondary battery protection circuit. WMini8-F1Package dimension clicks here. Click! Features Low drain-

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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