All MOSFET. STP5NA50FI Datasheet

 

STP5NA50FI Datasheet and Replacement


   Type Designator: STP5NA50FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: ISOWATT220
 

 STP5NA50FI substitution

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STP5NA50FI Datasheet (PDF)

 6.1. Size:404K  st
 stp5na50.pdf pdf_icon

STP5NA50FI

STP5NA50STP5NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA50 500 V

 8.1. Size:393K  st
 stp5na80.pdf pdf_icon

STP5NA50FI

STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA80 800 V

 8.2. Size:388K  st
 stp5na60.pdf pdf_icon

STP5NA50FI

STP5NA60STP5NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA60 600 V

 8.3. Size:96K  st
 stp5na80fp.pdf pdf_icon

STP5NA50FI

STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V

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Datasheet: STP5N60 , STP5N60FI , STP5N80 , STP5N80FI , STP5N80XI , STP5N90 , STP5N90FI , STP5NA50 , AON7410 , STP5NA60 , STP5NA60FI , STP5NA80 , STP5NA80FI , STP60N05 , STP60N05-16 , STP60N05FI , STP60N06 .

Keywords - STP5NA50FI MOSFET datasheet

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