NTMYS1D2N04CL Specs and Replacement

Type Designator: NTMYS1D2N04CL

Marking Code: 1D2N04CL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 258 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 109 nC

tr ⓘ - Rise Time: 8.1 nS

Cossⓘ - Output Capacitance: 3000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: LFPAK4

NTMYS1D2N04CL substitution

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NTMYS1D2N04CL datasheet

 ..1. Size:336K  onsemi
 ntmys1d2n04cl.pdf pdf_icon

NTMYS1D2N04CL

NTMYS1D2N04CL MOSFET Power, Single, N-Channel 40 V, 1.1 mW, 258 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard 1.1 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant 40 V 258 A... See More ⇒

 9.1. Size:326K  onsemi
 ntmys4d1n06cl.pdf pdf_icon

NTMYS1D2N04CL

MOSFET Power, Single, N-Channel 60 V, 4.0 mW, 100 A NTMYS4D1N06CL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard 4.0 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant 60 V 100 ... See More ⇒

Detailed specifications: NTMFS6H852NL, NTMFS6H864NL, NTMFSC0D9N04CL, NTMTS001N06CL, NTMTS0D6N04C, NTMTS0D6N04CL, NTMTS0D7N06C, NTMTS0D7N06CL, IRFP260, NTMYS4D1N06CL, NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF

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