All MOSFET. NTMYS1D2N04CL Datasheet

 

NTMYS1D2N04CL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMYS1D2N04CL
   Marking Code: 1D2N04CL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 258 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 109 nC
   trⓘ - Rise Time: 8.1 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: LFPAK4

 NTMYS1D2N04CL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMYS1D2N04CL Datasheet (PDF)

 ..1. Size:336K  onsemi
 ntmys1d2n04cl.pdf

NTMYS1D2N04CL NTMYS1D2N04CL

NTMYS1D2N04CLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 258 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard1.1 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant40 V 258 A

 9.1. Size:326K  onsemi
 ntmys4d1n06cl.pdf

NTMYS1D2N04CL NTMYS1D2N04CL

MOSFET Power, Single,N-Channel60 V, 4.0 mW, 100 ANTMYS4D1N06CLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard4.0 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant60 V100

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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