NTMYS1D2N04CL Datasheet and Replacement
Type Designator: NTMYS1D2N04CL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 258 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 8.1 nS
Cossⓘ - Output Capacitance: 3000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: LFPAK4
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NTMYS1D2N04CL Datasheet (PDF)
ntmys1d2n04cl.pdf

NTMYS1D2N04CLMOSFET Power, Single,N-Channel40 V, 1.1 mW, 258 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard1.1 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant40 V 258 A
ntmys4d1n06cl.pdf

MOSFET Power, Single,N-Channel60 V, 4.0 mW, 100 ANTMYS4D1N06CLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX LFPAK4 Package, Industry Standard4.0 mW @ 10 V These Devices are Pb-Free and are RoHS Compliant60 V100
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HFP12N65S | AON6794 | CED05N8 | IRLR024 | NTLJF3117PT1G | MC08N005C | BL10N70-A
Keywords - NTMYS1D2N04CL MOSFET datasheet
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History: HFP12N65S | AON6794 | CED05N8 | IRLR024 | NTLJF3117PT1G | MC08N005C | BL10N70-A



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