NTND31225CZ Specs and Replacement

Type Designator: NTND31225CZ

Marking Code: L*

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

tr ⓘ - Rise Time: 25.5 nS

Cossⓘ - Output Capacitance: 3.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: XLLGA6

NTND31225CZ substitution

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NTND31225CZ datasheet

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NTND31225CZ

NTND31225CZ MOSFET Small Signal, Complementary, XLLGAS6, 0.65mm x 0.90mm x 0.4mm 20 V www.onsemi.com Features V(BR)DSS RDS(ON) MAX ID Max Advanced Trench Complementary MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.5 W @ 4.5 V 0.65 mm 0.90 mm Package 2.0 W @ 2.5 V N-Channel 220 mA These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 20 V 3.0... See More ⇒

Detailed specifications: NTMFSC0D9N04CL, NTMTS001N06CL, NTMTS0D6N04C, NTMTS0D6N04CL, NTMTS0D7N06C, NTMTS0D7N06CL, NTMYS1D2N04CL, NTMYS4D1N06CL, SPP20N60C3, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, NTP360N80S3Z

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