All MOSFET. NTND31225CZ Datasheet

 

NTND31225CZ Datasheet and Replacement


   Type Designator: NTND31225CZ
   Marking Code: L*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 3.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: XLLGA6
 

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NTND31225CZ Datasheet (PDF)

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NTND31225CZ

NTND31225CZMOSFET Small Signal,Complementary, XLLGAS6,0.65mm x 0.90mm x 0.4mm20 Vwww.onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID Max Advanced Trench Complementary MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.5 W @ 4.5 V0.65 mm 0.90 mm Package2.0 W @ 2.5 VN-Channel220 mA These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 20 V3.0

Datasheet: NTMFSC0D9N04CL , NTMTS001N06CL , NTMTS0D6N04C , NTMTS0D6N04CL , NTMTS0D7N06C , NTMTS0D7N06CL , NTMYS1D2N04CL , NTMYS4D1N06CL , AON7410 , NTNS1K5N021Z , NTNS5K0P021Z , NTP055N65S3H , NTP095N65S3HF , NTP110N65S3HF , NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z .

Keywords - NTND31225CZ MOSFET datasheet

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