NTNS1K5N021Z MOSFET. Datasheet pdf. Equivalent
Type Designator: NTNS1K5N021Z
Marking Code: E*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25.5 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: XDFN3
NTNS1K5N021Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTNS1K5N021Z Datasheet (PDF)
ntns1k5n021z.pdf
NTNS1K5N021ZMOSFET Single,N-Channel, Small Signal,XDFN3,0.62 x 0.42 x 0.4 mmwww.onsemi.com20 V, 220 mAFeaturesV(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm)1.5 W @ 4.5 Vfor Extremely Space-Constrained Applications1.8 W @ 3.3 V 1.5 V Gate Drive2.2 W @ 2.5 V220 mA20 V These Devices are Pb-Free, Halogen Free/
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RJK0822SPN | 2SK2525-01
History: RJK0822SPN | 2SK2525-01
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