NTNS1K5N021Z Specs and Replacement

Type Designator: NTNS1K5N021Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.5 nS

Cossⓘ - Output Capacitance: 3.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: XDFN3

NTNS1K5N021Z substitution

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NTNS1K5N021Z datasheet

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NTNS1K5N021Z

NTNS1K5N021Z MOSFET Single, N-Channel, Small Signal, XDFN3, 0.62 x 0.42 x 0.4 mm www.onsemi.com 20 V, 220 mA Features V(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) 1.5 W @ 4.5 V for Extremely Space-Constrained Applications 1.8 W @ 3.3 V 1.5 V Gate Drive 2.2 W @ 2.5 V 220 mA 20 V These Devices are Pb-Free, Halogen Free/... See More ⇒

Detailed specifications: NTMTS001N06CL, NTMTS0D6N04C, NTMTS0D6N04CL, NTMTS0D7N06C, NTMTS0D7N06CL, NTMYS1D2N04CL, NTMYS4D1N06CL, NTND31225CZ, SKD502T, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, NTP360N80S3Z, NTP5862N

Keywords - NTNS1K5N021Z MOSFET specs

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