All MOSFET. NTNS1K5N021Z Datasheet

 

NTNS1K5N021Z Datasheet and Replacement


   Type Designator: NTNS1K5N021Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 3.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: XDFN3
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NTNS1K5N021Z Datasheet (PDF)

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NTNS1K5N021Z

NTNS1K5N021ZMOSFET Single,N-Channel, Small Signal,XDFN3,0.62 x 0.42 x 0.4 mmwww.onsemi.com20 V, 220 mAFeaturesV(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm)1.5 W @ 4.5 Vfor Extremely Space-Constrained Applications1.8 W @ 3.3 V 1.5 V Gate Drive2.2 W @ 2.5 V220 mA20 V These Devices are Pb-Free, Halogen Free/

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: APQ12SN60A | SSW65R190S2 | WMM07N65C4 | SM4186T9RL | TPCA8047-H | APT10021JFLL | NP180N04TUJ

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