NTNS1K5N021Z Datasheet and Replacement
Type Designator: NTNS1K5N021Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25.5 nS
Cossⓘ - Output Capacitance: 3.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: XDFN3
NTNS1K5N021Z substitution
NTNS1K5N021Z Datasheet (PDF)
ntns1k5n021z.pdf

NTNS1K5N021ZMOSFET Single,N-Channel, Small Signal,XDFN3,0.62 x 0.42 x 0.4 mmwww.onsemi.com20 V, 220 mAFeaturesV(BR)DSS RDS(on) MAX ID Max Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm)1.5 W @ 4.5 Vfor Extremely Space-Constrained Applications1.8 W @ 3.3 V 1.5 V Gate Drive2.2 W @ 2.5 V220 mA20 V These Devices are Pb-Free, Halogen Free/
Datasheet: NTMTS001N06CL , NTMTS0D6N04C , NTMTS0D6N04CL , NTMTS0D7N06C , NTMTS0D7N06CL , NTMYS1D2N04CL , NTMYS4D1N06CL , NTND31225CZ , IRF9540N , NTNS5K0P021Z , NTP055N65S3H , NTP095N65S3HF , NTP110N65S3HF , NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z , NTP5862N .
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History: SSF6025 | SWH15P03



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