All MOSFET. NTP055N65S3H Datasheet

 

NTP055N65S3H Datasheet and Replacement


   Type Designator: NTP055N65S3H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 305 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 96 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO220-3LD
 

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NTP055N65S3H Datasheet (PDF)

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NTP055N65S3H

MOSFET - Power,NChannel, SUPERFET) III,FAST650 V, 55 mW, 47 ANTP055N65S3Hwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 55 mW @ 10 V 47 Acharge performance. This advanced t

Datasheet: NTMTS0D6N04CL , NTMTS0D7N06C , NTMTS0D7N06CL , NTMYS1D2N04CL , NTMYS4D1N06CL , NTND31225CZ , NTNS1K5N021Z , NTNS5K0P021Z , TK10A60D , NTP095N65S3HF , NTP110N65S3HF , NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z , NTP5862N , NTP5D0N15MC , NTPF110N65S3HF .

History: JMSL0302AU | HRP80N08K | NCE30PD08S | RU30L15H | SIS407ADN

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