NTP055N65S3H Specs and Replacement

Type Designator: NTP055N65S3H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 305 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO220-3LD

NTP055N65S3H substitution

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NTP055N65S3H datasheet

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NTP055N65S3H

MOSFET - Power, N Channel, SUPERFET) III, FAST 650 V, 55 mW, 47 A NTP055N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 55 mW @ 10 V 47 A charge performance. This advanced t... See More ⇒

Detailed specifications: NTMTS0D6N04CL, NTMTS0D7N06C, NTMTS0D7N06CL, NTMYS1D2N04CL, NTMYS4D1N06CL, NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, 13N50, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, NTP360N80S3Z, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF

Keywords - NTP055N65S3H MOSFET specs

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