NTP110N65S3HF Specs and Replacement

Type Designator: NTP110N65S3HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO220

NTP110N65S3HF substitution

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NTP110N65S3HF datasheet

 ..1. Size:369K  onsemi
 ntp110n65s3hf.pdf pdf_icon

NTP110N65S3HF

NTP110N65S3HF MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 110 mW @ 10 V 30 A charge performance. This advanced... See More ⇒

Detailed specifications: NTMTS0D7N06CL, NTMYS1D2N04CL, NTMYS4D1N06CL, NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, 12N60, NTP150N65S3HF, NTP190N65S3HF, NTP360N80S3Z, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF

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