NTP360N80S3Z Specs and Replacement

Type Designator: NTP360N80S3Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.5 nS

Cossⓘ - Output Capacitance: 18.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220

NTP360N80S3Z substitution

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NTP360N80S3Z datasheet

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NTP360N80S3Z

MOSFET Power, N-Channel, SUPERFET) III 800 V, 360 mW, 13 A NTP360N80S3Z Description www.onsemi.com 800 V SUPERFET III MOSFET is ON Semiconductor s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for V(BR)DSS RDS(ON) MAX ID MAX primary switch of flyback converter, enables lower switching losses and case temperatur... See More ⇒

Detailed specifications: NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, IRFB3607, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ

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