All MOSFET. NTP360N80S3Z Datasheet

 

NTP360N80S3Z Datasheet and Replacement


   Type Designator: NTP360N80S3Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.5 nS
   Cossⓘ - Output Capacitance: 18.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220
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NTP360N80S3Z Datasheet (PDF)

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NTP360N80S3Z

MOSFET Power,N-Channel, SUPERFET) III800 V, 360 mW, 13 ANTP360N80S3ZDescriptionwww.onsemi.com800 V SUPERFET III MOSFET is ON Semiconductors highperformance MOSFET family offering 800 V breakdown voltage.New 800 V SUPERFET III MOSFET which is optimized forV(BR)DSS RDS(ON) MAX ID MAXprimary switch of flyback converter, enables lower switching lossesand case temperatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UT2305A | AON6794 | CED05N8 | IRLR024 | STF35N65M5 | MC08N005C | BL10N70-A

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