NTP360N80S3Z Specs and Replacement
Type Designator: NTP360N80S3Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 18.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220
NTP360N80S3Z substitution
- MOSFET ⓘ Cross-Reference Search
NTP360N80S3Z datasheet
ntp360n80s3z.pdf
MOSFET Power, N-Channel, SUPERFET) III 800 V, 360 mW, 13 A NTP360N80S3Z Description www.onsemi.com 800 V SUPERFET III MOSFET is ON Semiconductor s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for V(BR)DSS RDS(ON) MAX ID MAX primary switch of flyback converter, enables lower switching losses and case temperatur... See More ⇒
Detailed specifications: NTND31225CZ, NTNS1K5N021Z, NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, IRFB3607, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ
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