NTP360N80S3Z MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP360N80S3Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25.3 nC
trⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 18.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220
NTP360N80S3Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP360N80S3Z Datasheet (PDF)
..1. Size:267K onsemi
ntp360n80s3z.pdf
ntp360n80s3z.pdf
MOSFET Power,N-Channel, SUPERFET) III800 V, 360 mW, 13 ANTP360N80S3ZDescriptionwww.onsemi.com800 V SUPERFET III MOSFET is ON Semiconductors highperformance MOSFET family offering 800 V breakdown voltage.New 800 V SUPERFET III MOSFET which is optimized forV(BR)DSS RDS(ON) MAX ID MAXprimary switch of flyback converter, enables lower switching lossesand case temperatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
