NTP5D0N15MC Specs and Replacement
Type Designator: NTP5D0N15MC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 139 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
NTP5D0N15MC substitution
- MOSFET ⓘ Cross-Reference Search
NTP5D0N15MC datasheet
ntp5d0n15mc.pdf
MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 5.0 mW, 139 A NTP5D0N15MC Features www.onsemi.com Shielded Gate MOSFET Technology Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 97 A 50% Lower Qrr than other MOSFET Suppliers V(BR)DSS RDS(ON) MAX ID MAX Lowers Switching Noise/EMI 100% UIL Tested 150 V 5.0 mW @ 10 V 139 A These Devices are Pb-Free, Halogen Free/B... See More ⇒
Detailed specifications: NTNS5K0P021Z, NTP055N65S3H, NTP095N65S3HF, NTP110N65S3HF, NTP150N65S3HF, NTP190N65S3HF, NTP360N80S3Z, NTP5862N, IRF530, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, NTR3A052PZ, NTR3C21NZ, NTTFS002N04C, NTTFS002N04CL
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