All MOSFET. NTPF360N80S3Z Datasheet

 

NTPF360N80S3Z Datasheet and Replacement


   Type Designator: NTPF360N80S3Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25.3 nC
   tr ⓘ - Rise Time: 18.5 nS
   Cossⓘ - Output Capacitance: 18.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F
 

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NTPF360N80S3Z Datasheet (PDF)

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NTPF360N80S3Z

MOSFET Power,N-Channel, SUPERFET) III800 V, 360 mW, 13 ANTPF360N80S3ZDescriptionwww.onsemi.com800 V SUPERFET III MOSFET is ON Semiconductors highperformance MOSFET family offering 800 V breakdown voltage.New 800 V SUPERFET III MOSFET which is optimized forV(BR)DSS RDS(ON) MAX ID MAXprimary switch of flyback converter, enables lower switching lossesand case temperatu

Datasheet: NTP150N65S3HF , NTP190N65S3HF , NTP360N80S3Z , NTP5862N , NTP5D0N15MC , NTPF110N65S3HF , NTPF150N65S3HF , NTPF190N65S3HF , 20N50 , NTR3A052PZ , NTR3C21NZ , NTTFS002N04C , NTTFS002N04CL , NTTFS003N04C , NTTFS004N04C , NTTFS005N04C , NTTFS008N04C .

History: SI7374DP

Keywords - NTPF360N80S3Z MOSFET datasheet

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