NTR3A052PZ Specs and Replacement
Type Designator: NTR3A052PZ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 194 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT23
NTR3A052PZ substitution
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NTR3A052PZ datasheet
ntr3a052pz.pdf
NTR3A052PZ MOSFET Power, Single P-Channel, SOT-23 -20 V, -3.6 A Features Leading -20 V Trench for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) Max ID MAX Compliant Applications 47 mW @ -4.5 V Power Load Switch -20 V 63 mW @ -2.5 V -3.6 A MAXIMUM RATINGS (TJ = 2... See More ⇒
ntr3a30pz.pdf
NTR3A30PZ Power MOSFET -20 V, -5.5 A, Single P-Channel 2.4 x 2.9 x 1.0 mm SOT-23 Package Features Low RDS(on) Solution in 2.4 mm x 2.9 mm Package http //onsemi.com ESD Diode-Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) Max ID MAX Applications 38 mW @ -4.5 V High Side Load Switch -20 V 50 mW @ -2.5 V -5.5 A... See More ⇒
Detailed specifications: NTP190N65S3HF, NTP360N80S3Z, NTP5862N, NTP5D0N15MC, NTPF110N65S3HF, NTPF150N65S3HF, NTPF190N65S3HF, NTPF360N80S3Z, IRFP450, NTR3C21NZ, NTTFS002N04C, NTTFS002N04CL, NTTFS003N04C, NTTFS004N04C, NTTFS005N04C, NTTFS008N04C, NTTFS010N10MCL
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