All MOSFET. NTR3A052PZ Datasheet

 

NTR3A052PZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTR3A052PZ
   Marking Code: TRJ*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.9 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SOT23

 NTR3A052PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTR3A052PZ Datasheet (PDF)

 ..1. Size:127K  onsemi
ntr3a052pz.pdf

NTR3A052PZ
NTR3A052PZ

NTR3A052PZMOSFET Power, SingleP-Channel, SOT-23-20 V, -3.6 AFeatures Leading -20 V Trench for Low RDS(on)www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) Max ID MAXCompliantApplications47 mW @ -4.5 V Power Load Switch-20 V 63 mW @ -2.5 V -3.6 AMAXIMUM RATINGS (TJ = 2

 9.1. Size:109K  onsemi
ntr3a30pz.pdf

NTR3A052PZ
NTR3A052PZ

NTR3A30PZPower MOSFET-20 V, -5.5 A, Single P-Channel 2.4 x 2.9 x 1.0 mm SOT-23 PackageFeatures Low RDS(on) Solution in 2.4 mm x 2.9 mm Packagehttp://onsemi.com ESD Diode-Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) Max ID MAXApplications38 mW @ -4.5 V High Side Load Switch-20 V 50 mW @ -2.5 V -5.5 A

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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