SI12N60 Specs and Replacement

Type Designator: SI12N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 133 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220

SI12N60 substitution

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SI12N60 datasheet

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SI12N60

N-CHANNEL MOSFET SI12N60 ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit SSS12N60 VDSS V 600 Drain-Source Voltage ID 12 A Drain Current -continuous T=25 1 IDM 48 A Drain Current - pulse note 1 ... See More ⇒

Detailed specifications: NVATS4A103PZ, NVATS5A106PLZ, PM2301, PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, IRF3205, SI20N03, SI25N10, SI3400, SI3401, SI3403, SI3406, SI4260, SI4430

Keywords - SI12N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs