All MOSFET. SI12N60 Datasheet

 

SI12N60 Datasheet and Replacement


   Type Designator: SI12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 133 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220
 

 SI12N60 substitution

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SI12N60 Datasheet (PDF)

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SI12N60

N-CHANNEL MOSFETSI12N60 ABSOLUTE RATINGS (Tc=25) Value Parameter Symbol Unit SSS12N60 VDSSV600Drain-Source Voltage ID 12 ADrain Current -continuous T=25 1 IDM 48ADrain Current - pulse note 1

Datasheet: NVATS4A103PZ , NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , IRF3205 , SI20N03 , SI25N10 , SI3400 , SI3401 , SI3403 , SI3406 , SI4260 , SI4430 .

History: KML0D6NP20EA | SI20N03 | KXU05N25 | KF12N60F

Keywords - SI12N60 MOSFET datasheet

 SI12N60 cross reference
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