All MOSFET. SI20N03 Datasheet

 

SI20N03 Datasheet and Replacement


   Type Designator: SI20N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO252
 

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SI20N03 Datasheet (PDF)

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SI20N03

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI20N03TO-252 Description DThe SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Scan be used in a wide variety of applications. GGeneral Features Equivalent CircuitRDS(ON) DVDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R

Datasheet: NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 , IRF740 , SI25N10 , SI3400 , SI3401 , SI3403 , SI3406 , SI4260 , SI4430 , SI4614 .

History: SI4431CDY-T1-E3

Keywords - SI20N03 MOSFET datasheet

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