All MOSFET. SI20N03 Datasheet

 

SI20N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI20N03
   Marking Code: 20N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO252

 SI20N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI20N03 Datasheet (PDF)

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 si20n03.pdf

SI20N03 SI20N03

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI20N03TO-252 Description DThe SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Scan be used in a wide variety of applications. GGeneral Features Equivalent CircuitRDS(ON) DVDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R

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