SI20N03 Datasheet and Replacement
Type Designator: SI20N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO252
SI20N03 substitution
SI20N03 Datasheet (PDF)
si20n03.pdf

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI20N03TO-252 Description DThe SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Scan be used in a wide variety of applications. GGeneral Features Equivalent CircuitRDS(ON) DVDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R
Datasheet: NVATS5A106PLZ , PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 , IRF740 , SI25N10 , SI3400 , SI3401 , SI3403 , SI3406 , SI4260 , SI4430 , SI4614 .
History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF
Keywords - SI20N03 MOSFET datasheet
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History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF



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