SI20N03 Specs and Replacement

Type Designator: SI20N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO252

SI20N03 substitution

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SI20N03 datasheet

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SI20N03

N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI20N03 TO-252 Description D The SI20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It S can be used in a wide variety of applications. G General Features Equivalent Circuit RDS(ON) D VDSS ID @10V (typ) 30V 20A 14 m G High density cell design for ultra low R... See More ⇒

Detailed specifications: NVATS5A106PLZ, PM2301, PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, SI12N60, IRF740, SI25N10, SI3400, SI3401, SI3403, SI3406, SI4260, SI4430, SI4614

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