SI25N10 Specs and Replacement

Type Designator: SI25N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO252

SI25N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

SI25N10 datasheet

 ..1. Size:4265K  cn szxunrui
 si25n10.pdf pdf_icon

SI25N10

N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI25N10 N-Channel Enhancement Mode Power MOSFET Description TO-252 The SI25N10 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S Battery protection or in other switching application. G Equivalent Circuit General Fea... See More ⇒

Detailed specifications: PM2301, PM2302, PM3400, PM3401, KS2302AA, SI12N60-F, SI12N60, SI20N03, IRF840, SI3400, SI3401, SI3403, SI3406, SI4260, SI4430, SI4614, SI4953

Keywords - SI25N10 MOSFET specs

 SI25N10 cross reference

 SI25N10 equivalent finder

 SI25N10 pdf lookup

 SI25N10 substitution

 SI25N10 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.