All MOSFET. SI25N10 Datasheet

 

SI25N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI25N10
   Marking Code: 25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.9 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO252

 SI25N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI25N10 Datasheet (PDF)

 ..1. Size:4265K  cn szxunrui
 si25n10.pdf

SI25N10 SI25N10

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI25N10N-Channel Enhancement Mode Power MOSFET Description TO-252 The SI25N10 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a SBattery protection or in other switching application. GEquivalent CircuitGeneral Fea

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N65KL-TN3-R

 

 
Back to Top