All MOSFET. SI25N10 Datasheet

 

SI25N10 Datasheet and Replacement


   Type Designator: SI25N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO252
 

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SI25N10 Datasheet (PDF)

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SI25N10

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI25N10N-Channel Enhancement Mode Power MOSFET Description TO-252 The SI25N10 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a SBattery protection or in other switching application. GEquivalent CircuitGeneral Fea

Datasheet: PM2301 , PM2302 , PM3400 , PM3401 , KS2302AA , SI12N60-F , SI12N60 , SI20N03 , IRF840 , SI3400 , SI3401 , SI3403 , SI3406 , SI4260 , SI4430 , SI4614 , SI4953 .

History: TPC8029 | R6009ENJ | CRJD390N65GC

Keywords - SI25N10 MOSFET datasheet

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