SI4614 Specs and Replacement

Type Designator: SI4614

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SO8L SOP8

SI4614 substitution

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SI4614 datasheet

 ..1. Size:3951K  cn szxunrui
 si4614.pdf pdf_icon

SI4614

SOP-8 Plastic-Encapsulate MOSFETS SI4614 N and P-Channel Enhancement Mode Power MOSFET Description The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagr... See More ⇒

 9.1. Size:272K  vishay
 si4618dy.pdf pdf_icon

SI4614

Si4618DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 8.0 TrenchFET Power MOSFET Channel-1 30 12.5 0.0195 at VGS = 4.5 V 7.5 100 % Rg and UIS Tested 0.010 at VGS = 10 V 15.2 Compliant to RoHS Directi... See More ⇒

Detailed specifications: SI20N03, SI25N10, SI3400, SI3401, SI3403, SI3406, SI4260, SI4430, IRF640, SI4953, SI4N60-TA3-T, SI4N60-TF3-T, SI4N60-TM3-T, SI4N60-TN3-R, SI4N60-TN3-T, SI4N60L-TA3-T, SI4N60L-TF3-T

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