All MOSFET. SI4614 Datasheet

 

SI4614 Datasheet and Replacement


   Type Designator: SI4614
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8L SOP8
 

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SI4614 Datasheet (PDF)

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SI4614

SOP-8 Plastic-Encapsulate MOSFETS SI4614N and P-Channel Enhancement Mode Power MOSFET Description The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagr

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SI4614

Si4618DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 8.0 TrenchFET Power MOSFETChannel-1 30 12.50.0195 at VGS = 4.5 V 7.5 100 % Rg and UIS Tested0.010 at VGS = 10 V 15.2 Compliant to RoHS Directi

Datasheet: SI20N03 , SI25N10 , SI3400 , SI3401 , SI3403 , SI3406 , SI4260 , SI4430 , IRF640 , SI4953 , SI4N60-TA3-T , SI4N60-TF3-T , SI4N60-TM3-T , SI4N60-TN3-R , SI4N60-TN3-T , SI4N60L-TA3-T , SI4N60L-TF3-T .

History: AOD417 | L2N7002WT1G | L2N7002LT1G | AOD4189 | L2SK3018WT1G | SI4N60-TN3-R

Keywords - SI4614 MOSFET datasheet

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