SI60N03 Specs and Replacement

Type Designator: SI60N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251 TO252

SI60N03 substitution

- MOSFET ⓘ Cross-Reference Search

 

SI60N03 datasheet

 ..1. Size:3316K  cn szxunrui
 si60n03.pdf pdf_icon

SI60N03

... See More ⇒

Detailed specifications: SI5N60-TM3-T, SI5N60-TN3-R, SI5N60-TN3-T, SI5N60L-TA3-T, SI5N60L-TF3-T, SI5N60L-TM3-T, SI5N60L-TN3-R, SI5N60L-TN3-T, IRF4905, SI68H11, SI7N65, SI7N65F, SI8205A, SI8205S, SI9435, TX216521M6R, PS3400N

Keywords - SI60N03 MOSFET specs

 SI60N03 cross reference

 SI60N03 equivalent finder

 SI60N03 pdf lookup

 SI60N03 substitution

 SI60N03 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility