SI60N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI60N03
Marking Code: 60N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO251 TO252
SI60N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI60N03 Datasheet (PDF)
si60n03.pdf
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N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI60N03Product SummaryV 30 VDSTO-252 TO-251 R m D DS(on),max SMDversion 9I 60 AD S SD GGFeaturesEquivalent Circuit For fast switching converters and sync. rectificationD N-channel enhancement - normal levelG Avalanche rated Pb-free lead plating, RoHS compliantSMARKINGTypical Applications
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: VBFB1405