All MOSFET. SI60N03 Datasheet

 

SI60N03 Datasheet and Replacement


   Type Designator: SI60N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251 TO252
 

 SI60N03 substitution

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SI60N03 Datasheet (PDF)

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SI60N03

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI60N03Product SummaryV 30 VDSTO-252 TO-251 R m D DS(on),max SMDversion 9I 60 AD S SD GGFeaturesEquivalent Circuit For fast switching converters and sync. rectificationD N-channel enhancement - normal levelG Avalanche rated Pb-free lead plating, RoHS compliantSMARKINGTypical Applications

Datasheet: SI5N60-TM3-T , SI5N60-TN3-R , SI5N60-TN3-T , SI5N60L-TA3-T , SI5N60L-TF3-T , SI5N60L-TM3-T , SI5N60L-TN3-R , SI5N60L-TN3-T , IRF4905 , SI68H11 , SI7N65 , SI7N65F , SI8205A , SI8205S , SI9435 , TX216521M6R , PS3400N .

History: SI2366DS

Keywords - SI60N03 MOSFET datasheet

 SI60N03 cross reference
 SI60N03 equivalent finder
 SI60N03 lookup
 SI60N03 substitution
 SI60N03 replacement

 

 
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