All MOSFET. SI68H11 Datasheet

 

SI68H11 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI68H11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220 TO220H TO263

 SI68H11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI68H11 Datasheet (PDF)

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 si68h11.pdf

SI68H11 SI68H11

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI68H11 POWER MOSFET Features 68V,110A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GGD High ruggedness GD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application GDS TO-220Absolute Maximum Ratings Symbol Parameter Value

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