SI68H11 Specs and Replacement
Type Designator: SI68H11
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
SI68H11 substitution
- MOSFET ⓘ Cross-Reference Search
SI68H11 datasheet
si68h11.pdf
N -CHANNEL ENHANCEMENT MODE POWER MOSFET SI68H11 POWER MOSFET Features 68V,110A N-Channel MOSFET RDS(on)(typ.)=6.5m @VGS=10V G G D High ruggedness G D Fast switching TO-263 S S TO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application G D S TO-220 Absolute Maximum Ratings Symbol Parameter Value... See More ⇒
Detailed specifications: SI5N60-TN3-R, SI5N60-TN3-T, SI5N60L-TA3-T, SI5N60L-TF3-T, SI5N60L-TM3-T, SI5N60L-TN3-R, SI5N60L-TN3-T, SI60N03, IRLB4132, SI7N65, SI7N65F, SI8205A, SI8205S, SI9435, TX216521M6R, PS3400N, NVATS5A107PLZ
Keywords - SI68H11 MOSFET specs
SI68H11 cross reference
SI68H11 equivalent finder
SI68H11 pdf lookup
SI68H11 substitution
SI68H11 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
