All MOSFET. SI68H11 Datasheet

 

SI68H11 Datasheet and Replacement


   Type Designator: SI68H11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220 TO220H TO263
 

 SI68H11 substitution

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SI68H11 Datasheet (PDF)

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SI68H11

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI68H11 POWER MOSFET Features 68V,110A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GGD High ruggedness GD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application GDS TO-220Absolute Maximum Ratings Symbol Parameter Value

Datasheet: SI5N60-TN3-R , SI5N60-TN3-T , SI5N60L-TA3-T , SI5N60L-TF3-T , SI5N60L-TM3-T , SI5N60L-TN3-R , SI5N60L-TN3-T , SI60N03 , 5N60 , SI7N65 , SI7N65F , SI8205A , SI8205S , SI9435 , TX216521M6R , PS3400N , NVATS5A107PLZ .

History: BUK9K52-60E | 2SK1377 | IXTH30N50P

Keywords - SI68H11 MOSFET datasheet

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