All MOSFET. SI68H11 Datasheet

 

SI68H11 Datasheet and Replacement


   Type Designator: SI68H11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220 TO220H TO263
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SI68H11 Datasheet (PDF)

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SI68H11

N -CHANNEL ENHANCEMENT MODE POWER MOSFETSI68H11 POWER MOSFET Features 68V,110A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GGD High ruggedness GD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application GDS TO-220Absolute Maximum Ratings Symbol Parameter Value

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History: PE6D2DX | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2

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