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SI7N65 Datasheet and Replacement


   Type Designator: SI7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.27 Ohm
   Package: TO220
 

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SI7N65 Datasheet (PDF)

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SI7N65

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SI7N65Description 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application R = 1.27 (Max.) @ V = 10V, I = 3.5A DC-DC & DC-AC Converters DS(ON) GS D Fast switching Uninterruptible Power Supply (UPS) 100% avalanche tested Switch Mode Low Power Supplies Improved dv/dt capability PackageTO-220 TO-220

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SI7N65

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SI7N65

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

Datasheet: SI5N60-TN3-T , SI5N60L-TA3-T , SI5N60L-TF3-T , SI5N60L-TM3-T , SI5N60L-TN3-R , SI5N60L-TN3-T , SI60N03 , SI68H11 , AO3400 , SI7N65F , SI8205A , SI8205S , SI9435 , TX216521M6R , PS3400N , NVATS5A107PLZ , NVATS5A112PLZ .

History: BRCS3420MC | CS10J60A4-G | 2SK1377 | PPM6N20V10 | SI1958DH | BLM04N08-B | TK13A25D

Keywords - SI7N65 MOSFET datasheet

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