SI7N65 Specs and Replacement

Type Designator: SI7N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.27 Ohm

Package: TO220

SI7N65 substitution

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SI7N65 datasheet

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 si7n65.pdf pdf_icon

SI7N65

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SI7N65 Description 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application R = 1.27 (Max.) @ V = 10V, I = 3.5A DC-DC & DC-AC Converters DS(ON) GS D Fast switching Uninterruptible Power Supply (UPS) 100% avalanche tested Switch Mode Low Power Supplies Improved dv/dt capability Package TO-220 TO-220... See More ⇒

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 ssi7n60a ssw7n60a.pdf pdf_icon

SI7N65

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 ssw7n60b ssi7n60b.pdf pdf_icon

SI7N65

November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: SI5N60-TN3-T, SI5N60L-TA3-T, SI5N60L-TF3-T, SI5N60L-TM3-T, SI5N60L-TN3-R, SI5N60L-TN3-T, SI60N03, SI68H11, AO3401, SI7N65F, SI8205A, SI8205S, SI9435, TX216521M6R, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ

Keywords - SI7N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.