TX216521M6R Specs and Replacement

Type Designator: TX216521M6R

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23-6

TX216521M6R substitution

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TX216521M6R datasheet

 ..1. Size:1162K  cn szxunrui
 tx216521m6r.pdf pdf_icon

TX216521M6R

TX216521M6R 20V/50mR@4.5V N-Channel And -20V/95m @-4.5V P-Channel MOSFETs Features N-Channel Applications Inverter VDS(max)=20V Battery Protection ID(max)=4.7A Load Switch RDS(ON) =50m (max)@VGS = 4.5V CCFL Driver RDS(ON) =65m (max)@VGS = 2.5V Improved dv/dt capability Green Device Available Fast switching SOT23-6 Pin... See More ⇒

 9.1. Size:59K  kec
 ktx216u.pdf pdf_icon

TX216521M6R

KTX216U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design. C 0... See More ⇒

Detailed specifications: SI5N60L-TN3-T, SI60N03, SI68H11, SI7N65, SI7N65F, SI8205A, SI8205S, SI9435, SKD502T, PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ

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