NVB072N65S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: NVB072N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 72.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: D2PAK-3
NVB072N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVB072N65S3 Datasheet (PDF)
..1. Size:230K onsemi
nvb072n65s3.pdf
nvb072n65s3.pdf
MOSFET - Power,N-Channel, AutomotiveSUPERFET) III, Easy-Drive650 V, 72 mW, 44 ANVB072N65S3www.onsemi.comDescriptionSuperFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeBVDSS RDS(on) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology
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