NVB072N65S3 Datasheet and Replacement
Type Designator: NVB072N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 72.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: D2PAK-3
NVB072N65S3 substitution
NVB072N65S3 Datasheet (PDF)
nvb072n65s3.pdf

MOSFET - Power,N-Channel, AutomotiveSUPERFET) III, Easy-Drive650 V, 72 mW, 44 ANVB072N65S3www.onsemi.comDescriptionSuperFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeBVDSS RDS(on) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology
Datasheet: PS3400N , NVATS5A107PLZ , NVATS5A112PLZ , NVATS5A113PLZ , NVATS5A114PLZ , NVATS5A302PLZ , NVATS5A304PLZ , NVATS68301PZ , AO4407 , NVB082N65S3F , NVB110N65S3F , NVB150N65S3F , NVB190N65S3F , NVBF170L , NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 .
History: MPSP65M390
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History: MPSP65M390



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