NVB072N65S3 Specs and Replacement

Type Designator: NVB072N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 72.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: D2PAK-3

NVB072N65S3 substitution

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NVB072N65S3 datasheet

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NVB072N65S3

MOSFET - Power, N-Channel, Automotive SUPERFET) III, Easy-Drive 650 V, 72 mW, 44 A NVB072N65S3 www.onsemi.com Description SuperFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge BVDSS RDS(on) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology ... See More ⇒

Detailed specifications: PS3400N, NVATS5A107PLZ, NVATS5A112PLZ, NVATS5A113PLZ, NVATS5A114PLZ, NVATS5A302PLZ, NVATS5A304PLZ, NVATS68301PZ, IRF530, NVB082N65S3F, NVB110N65S3F, NVB150N65S3F, NVB190N65S3F, NVBF170L, NVBG020N120SC1, NVBG040N120SC1, NVBG060N090SC1

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