All MOSFET. NVBG160N120SC1 Datasheet

 

NVBG160N120SC1 Datasheet and Replacement


   Type Designator: NVBG160N120SC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id| ⓘ - Maximum Drain Current: 19.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 33.8 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 50.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm
   Package: D2PAK-7L
 

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NVBG160N120SC1 Datasheet (PDF)

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NVBG160N120SC1

MOSFET SiC Power,Single N-Channel,D2PAK-7L1200 V, 160 mW, 19.5 ANVBG160N120SC1www.onsemi.comFeatures Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC)V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (typ. Coss = 50.7 pF)1200 V 224 mW @ 20 V 19.5 A 100% Avalanche Tested Qualified According to AEC-Q101Drain (TAB)

Datasheet: NVB110N65S3F , NVB150N65S3F , NVB190N65S3F , NVBF170L , NVBG020N120SC1 , NVBG040N120SC1 , NVBG060N090SC1 , NVBG080N120SC1 , STF13NM60N , NVBGS4D1N15MC , NVBGS6D5N15MC , NVBLS001N06C , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC .

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