NVBG160N120SC1 MOSFET. Datasheet pdf. Equivalent
Type Designator: NVBG160N120SC1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
|Id|ⓘ - Maximum Drain Current: 19.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 33.8 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 50.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm
Package: D2PAK-7L
NVBG160N120SC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVBG160N120SC1 Datasheet (PDF)
..1. Size:332K onsemi
nvbg160n120sc1.pdf
nvbg160n120sc1.pdf
MOSFET SiC Power,Single N-Channel,D2PAK-7L1200 V, 160 mW, 19.5 ANVBG160N120SC1www.onsemi.comFeatures Typ. RDS(on) = 160 mW Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC)V(BR)DSS RDS(ON) MAX ID MAX Low Effective Output Capacitance (typ. Coss = 50.7 pF)1200 V 224 mW @ 20 V 19.5 A 100% Avalanche Tested Qualified According to AEC-Q101Drain (TAB)
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