All MOSFET. NVC3S5A51PLZ Datasheet

 

NVC3S5A51PLZ Datasheet and Replacement


   Type Designator: NVC3S5A51PLZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: CPH3
 

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NVC3S5A51PLZ Datasheet (PDF)

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NVC3S5A51PLZ

NVC3S5A51PLZ Power MOSFET 60V, 250m, 1.8A, P-Channel Automotive Power MOSFET designed to minimize gate charge and low on www.onsemi.com resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max 4V drive 250m@ 10V High ESD protection 60V 330m@ 4.5V 1.8A Low On-Resista

Datasheet: NVBGS4D1N15MC , NVBGS6D5N15MC , NVBLS001N06C , NVBLS0D5N04M8 , NVBLS0D7N04M8 , NVBLS0D7N06C , NVBLS1D1N08H , NVBLS4D0N15MC , 20N50 , NVD5C446N , NVD5C454N , NVD5C454NL , NVD5C632NL , NVD5C668NL , NVD5C688NL , NVD6415ANL , NVF2955P .

History: NVBLS0D7N04M8 | IPB160N04S2L-03 | 2SK3517-01 | NCEP1545G | IPB160N04S3-H2 | NCEP1545K | 2SK3518-01MR

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