NVC3S5A51PLZ Specs and Replacement
Type Designator: NVC3S5A51PLZ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: CPH3
NVC3S5A51PLZ substitution
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NVC3S5A51PLZ datasheet
nvc3s5a51plz.pdf
NVC3S5A51PLZ Power MOSFET 60V, 250m , 1.8A, P-Channel Automotive Power MOSFET designed to minimize gate charge and low on www.onsemi.com resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max 4V drive 250m @ 10V High ESD protection 60V 330m @ 4.5V 1.8A Low On-Resista... See More ⇒
Detailed specifications: NVBGS4D1N15MC, NVBGS6D5N15MC, NVBLS001N06C, NVBLS0D5N04M8, NVBLS0D7N04M8, NVBLS0D7N06C, NVBLS1D1N08H, NVBLS4D0N15MC, 20N50, NVD5C446N, NVD5C454N, NVD5C454NL, NVD5C632NL, NVD5C668NL, NVD5C688NL, NVD6415ANL, NVF2955P
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NVC3S5A51PLZ replacement
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