All MOSFET. NVHL160N120SC1 Datasheet

 

NVHL160N120SC1 Datasheet and Replacement


   Type Designator: NVHL160N120SC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm
   Package: TO-247-3LD
 

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NVHL160N120SC1 Datasheet (PDF)

 ..1. Size:310K  onsemi
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NVHL160N120SC1

MOSFET - SiC Power, SingleN-Channel1200 V, 160 mW, 17 ANVHL160N120SC1Features Typ. RDS(on) = 160 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 34 nC) Low Effective Output Capacitance (typ. Coss = 50 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested1200 V 224 mW @ 20 V 17 A Qualified According to AEC-Q101 These Devices are RoHS CompliantN-CHANN

Datasheet: NVHL027N65S3F , NVHL040N65S3F , NVHL050N65S3HF , NVHL060N090SC1 , NVHL072N65S3 , NVHL080N120SC1 , NVHL080N120SC1A , NVHL082N65S3F , 2SK3918 , NVMFD016N06C , NVMFD020N06C , NVMFD024N06C , NVMFD030N06C , NVMFD5853NWF , NVMFD5875NL , NVMFD5C446N , NVMFD5C446NL .

History: IRFS820B | FQD30N06TM | AP9477GM | 2SK3109-S | HM1P10MR | HMS15N60D | SIHFD9220

Keywords - NVHL160N120SC1 MOSFET datasheet

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