NVHL160N120SC1 Specs and Replacement

Type Designator: NVHL160N120SC1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 119 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm

Package: TO-247-3LD

NVHL160N120SC1 substitution

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NVHL160N120SC1 datasheet

 ..1. Size:310K  onsemi
 nvhl160n120sc1.pdf pdf_icon

NVHL160N120SC1

MOSFET - SiC Power, Single N-Channel 1200 V, 160 mW, 17 A NVHL160N120SC1 Features Typ. RDS(on) = 160 mW www.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 34 nC) Low Effective Output Capacitance (typ. Coss = 50 pF) V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested 1200 V 224 mW @ 20 V 17 A Qualified According to AEC-Q101 These Devices are RoHS Compliant N-CHANN... See More ⇒

Detailed specifications: NVHL027N65S3F, NVHL040N65S3F, NVHL050N65S3HF, NVHL060N090SC1, NVHL072N65S3, NVHL080N120SC1, NVHL080N120SC1A, NVHL082N65S3F, EMB04N03H, NVMFD016N06C, NVMFD020N06C, NVMFD024N06C, NVMFD030N06C, NVMFD5853NWF, NVMFD5875NL, NVMFD5C446N, NVMFD5C446NL

Keywords - NVHL160N120SC1 MOSFET specs

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