All MOSFET. NVHL160N120SC1 Datasheet

 

NVHL160N120SC1 Datasheet and Replacement


   Type Designator: NVHL160N120SC1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.224 Ohm
   Package: TO-247-3LD
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NVHL160N120SC1 Datasheet (PDF)

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NVHL160N120SC1

MOSFET - SiC Power, SingleN-Channel1200 V, 160 mW, 17 ANVHL160N120SC1Features Typ. RDS(on) = 160 mWwww.onsemi.com Ultra Low Gate Charge (typ. QG(tot) = 34 nC) Low Effective Output Capacitance (typ. Coss = 50 pF)V(BR)DSS RDS(on) MAX ID MAX 100% UIL Tested1200 V 224 mW @ 20 V 17 A Qualified According to AEC-Q101 These Devices are RoHS CompliantN-CHANN

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History: CS15N50P | IRLR024 | AON6794 | MC08N005C | MCS2305B | CED05N8 | BL10N70-A

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