STP9N30 PDF and Equivalents Search

 

STP9N30 Specs and Replacement

Type Designator: STP9N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220

STP9N30 substitution

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STP9N30 datasheet

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stp9n30.pdf pdf_icon

STP9N30

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stp9nc65.pdf pdf_icon

STP9N30

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std9nm60n stf9nm60n stp9nm60n.pdf pdf_icon

STP9N30

STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 1 STD9NM60N 1 TO-220FP TO-220 STF9NM60N 650 V ... See More ⇒

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stp9nk65z stp9nk65zfp.pdf pdf_icon

STP9N30

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Detailed specifications: STP7N20FI , STP7NA40 , STP7NA40FI , STP7NA60 , STP7NA60FI , STP8N50XI , STP8NA50 , STP8NA50FI , SI2302 , STP9NA50 , STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 .

Keywords - STP9N30 MOSFET specs

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