All MOSFET. NVTFS6H880NL Datasheet

 

NVTFS6H880NL Datasheet and Replacement


   Type Designator: NVTFS6H880NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: WDFN8
 

 NVTFS6H880NL substitution

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NVTFS6H880NL Datasheet (PDF)

 ..1. Size:265K  onsemi
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NVTFS6H880NL

MOSFET - Power, SingleN-Channel80 V, 29 mW, 22 ANVTFS6H880NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H880NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 29 mW @ 10 V80 V22 A These Devi

 3.1. Size:198K  onsemi
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NVTFS6H880NL

MOSFET - Power, SingleN-Channel80 V, 32 mW, 22 ANVTFS6H880NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H880NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 32 mW @ 10 V 22 A These Device

 5.1. Size:267K  onsemi
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NVTFS6H880NL

MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Dev

 5.2. Size:202K  onsemi
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NVTFS6H880NL

MOSFET - Power, SingleN-Channel80 V, 55 mW, 13 ANVTFS6H888NFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS6H888NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable80 V 55 mW @ 10 V 13 A These Device

Datasheet: NVTFS5C680NL , NVTFS6H850N , NVTFS6H850NL , NVTFS6H854N , NVTFS6H854NL , NVTFS6H860N , NVTFS6H860NL , NVTFS6H880N , IRF630 , NVTFS6H888N , NVTFS6H888NL , NVTFS9D6P04M8L , STD25P03L , PJM02N60SA , PJM07P20SA , PJM10H03NSC , PJM138NSA .

History: SMG2336N | FHD100N03A

Keywords - NVTFS6H880NL MOSFET datasheet

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