EM6M2 Specs and Replacement
Type Designator: EM6M2
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SOT-563
EM6M2 substitution
- MOSFET ⓘ Cross-Reference Search
EM6M2 datasheet
em6m2.pdf
1.2V Drive Nch+Pch MOSFET EM6M2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / EMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol M02 Applications Inner circuit Switch... See More ⇒
Detailed specifications: PJM2319PSA, PJM3400NSA, PJM3400NSC, PJM3401PSA, PJM3401PSC, PJM3407PSA, PJM3415PSA, PJM84PSA, SPP20N60C3, LSK3019FP8, LSK3541FS8, RD3P200SNFRA, RJU002N06, RK7002BMHZG, RQ3C150BC, RQ5E040TN, RQ5E050AT
Keywords - EM6M2 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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