RQ3C150BC Specs and Replacement
Type Designator: RQ3C150BC
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 890 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: HSMT8
RQ3C150BC substitution
- MOSFET ⓘ Cross-Reference Search
RQ3C150BC datasheet
rq3c150bc.pdf
RQ3C150BC Pch -20V -37A Power MOSFET Datasheet lOutline l VDSS -20V RDS(on)(Max.) 6.7m HSMT8 ID 37A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested lPackaging specifications l Embossed Packing... See More ⇒
Detailed specifications: PJM3415PSA, PJM84PSA, EM6M2, LSK3019FP8, LSK3541FS8, RD3P200SNFRA, RJU002N06, RK7002BMHZG, 5N65, RQ5E040TN, RQ5E050AT, RRR040P03FRA, RSQ035P03, RSR025P03, RTE002P02, RTM002P02, RTQ020N05HZG
Keywords - RQ3C150BC MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK737 | KX6N70F | SM1F04NSFP
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