All MOSFET. RQ3C150BC Datasheet

 

RQ3C150BC Datasheet and Replacement


   Type Designator: RQ3C150BC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: HSMT8
 

 RQ3C150BC substitution

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RQ3C150BC Datasheet (PDF)

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RQ3C150BC

RQ3C150BCPch -20V -37A Power MOSFETDatasheetlOutlinelVDSS-20VRDS(on)(Max.)6.7m HSMT8ID37APD20W lInner circuitllFeaturesl1) Low on - resistance2) High Power Package (HSMT8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) 100% Rg and UIS testedlPackaging specificationslEmbossed Packing

Datasheet: PJM3415PSA , PJM84PSA , EM6M2 , LSK3019FP8 , LSK3541FS8 , RD3P200SNFRA , RJU002N06 , RK7002BMHZG , 4435 , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 , RTM002P02 , RTQ020N05HZG .

History: IPI120N10S4-03 | FHF2N65D

Keywords - RQ3C150BC MOSFET datasheet

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