RQ3C150BC Datasheet and Replacement

   Type Designator: RQ3C150BC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: HSMT8
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