RTM002P02 PDF and Equivalents Search

 

RTM002P02 Specs and Replacement

Type Designator: RTM002P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: VMT3

RTM002P02 substitution

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RTM002P02 datasheet

 ..1. Size:75K  rohm
 rtm002p02.pdf pdf_icon

RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 0.5 3) 2.5V drive. 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol TW Applications Switching Packaging specifications Inner circuit ... See More ⇒

 0.1. Size:73K  rohm
 rtm002p02t2l.pdf pdf_icon

RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 0.5 3) 2.5V drive. 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol TW Applications Switching Packaging specifications Inner circuit ... See More ⇒

Detailed specifications: RK7002BMHZG, RQ3C150BC, RQ5E040TN, RQ5E050AT, RRR040P03FRA, RSQ035P03, RSR025P03, RTE002P02, AON7506, RTQ020N05HZG, RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE

Keywords - RTM002P02 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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