All MOSFET. RTM002P02 Datasheet

 

RTM002P02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RTM002P02
   Marking Code: TW
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: VMT3

 RTM002P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RTM002P02 Datasheet (PDF)

 ..1. Size:75K  rohm
 rtm002p02.pdf

RTM002P02 RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

 0.1. Size:73K  rohm
 rtm002p02t2l.pdf

RTM002P02 RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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