All MOSFET. RTM002P02 Datasheet

 

RTM002P02 Datasheet and Replacement


   Type Designator: RTM002P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: VMT3
 

 RTM002P02 substitution

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RTM002P02 Datasheet (PDF)

 ..1. Size:75K  rohm
 rtm002p02.pdf pdf_icon

RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

 0.1. Size:73K  rohm
 rtm002p02t2l.pdf pdf_icon

RTM002P02

RTM002P02 Transistors 2.5V Drive Pch MOS FET RTM002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.4 0.53) 2.5V drive. 0.8(1)Gate(2)Source(3)Drain Abbreviated symbol : TW ApplicationsSwitching Packaging specifications Inner circuit

Datasheet: RK7002BMHZG , RQ3C150BC , RQ5E040TN , RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 , IRFP250 , RTQ020N05HZG , RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE .

History: IRLML2060TR

Keywords - RTM002P02 MOSFET datasheet

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