All MOSFET. RTU002P02 Datasheet

 

RTU002P02 Datasheet and Replacement


   Type Designator: RTU002P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: UMT3
 

 RTU002P02 substitution

   - MOSFET ⓘ Cross-Reference Search

 

RTU002P02 Datasheet (PDF)

 ..1. Size:48K  rohm
 rtu002p02.pdf pdf_icon

RTU002P02

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

 0.1. Size:52K  rohm
 rtu002p02t106.pdf pdf_icon

RTU002P02

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : TW(3) Drain Packa

Datasheet: RQ5E050AT , RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 , RTM002P02 , RTQ020N05HZG , RTQ025P02 , IRFZ24N , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE , SCT2750NY , SCT2H12NZ , SCT3080KL .

History: AP4509GM-HF

Keywords - RTU002P02 MOSFET datasheet

 RTU002P02 cross reference
 RTU002P02 equivalent finder
 RTU002P02 lookup
 RTU002P02 substitution
 RTU002P02 replacement

 

 
Back to Top

 


 
.