RTU002P02 PDF and Equivalents Search

 

RTU002P02 Specs and Replacement

Type Designator: RTU002P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: UMT3

RTU002P02 substitution

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RTU002P02 datasheet

 ..1. Size:48K  rohm
 rtu002p02.pdf pdf_icon

RTU002P02

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol TW (3) Drain Packa... See More ⇒

 0.1. Size:52K  rohm
 rtu002p02t106.pdf pdf_icon

RTU002P02

RTU002P02 Transistors 2.5V Drive Pch MOS FET RTU002P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol TW (3) Drain Packa... See More ⇒

Detailed specifications: RQ5E050AT, RRR040P03FRA, RSQ035P03, RSR025P03, RTE002P02, RTM002P02, RTQ020N05HZG, RTQ025P02, TK10A60D, RUC002N05HZGT116, RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE, SCT2750NY, SCT2H12NZ, SCT3080KL

Keywords - RTU002P02 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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