RUC002N05HZGT116 PDF and Equivalents Search

 

RUC002N05HZGT116 Specs and Replacement

Type Designator: RUC002N05HZGT116

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: SOT-23

RUC002N05HZGT116 substitution

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RUC002N05HZGT116 datasheet

 0.1. Size:2353K  rohm
 ruc002n05hzgt116.pdf pdf_icon

RUC002N05HZGT116

RUC002N05HZGT116 Datasheet Nch 50V 200mA Small Signal MOSFET AEC-Q101 Qualified lOutline l SOT-23 VDSS 50V SST3 RDS(on)(Max.) 2.2 ID 200mA PD 350mW lInner circuit l lFeatures l 1) Very fast switching 2) Ultra low voltage drive(1.2V drive) 3) AEC-Q101 Qualified 4) Pb-free lead plating ; RoHS compliant. 5) Halogen... See More ⇒

 5.1. Size:195K  rohm
 ruc002n05.pdf pdf_icon

RUC002N05HZGT116

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Detailed specifications: RRR040P03FRA, RSQ035P03, RSR025P03, RTE002P02, RTM002P02, RTQ020N05HZG, RTQ025P02, RTU002P02, AO4407, RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE, SCT2750NY, SCT2H12NZ, SCT3080KL, SCT3080KLHR

Keywords - RUC002N05HZGT116 MOSFET specs

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