All MOSFET. RUC002N05HZGT116 Datasheet

 

RUC002N05HZGT116 Datasheet and Replacement


   Type Designator: RUC002N05HZGT116
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOT-23
 

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RUC002N05HZGT116 Datasheet (PDF)

 0.1. Size:2353K  rohm
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RUC002N05HZGT116

RUC002N05HZGT116DatasheetNch 50V 200mA Small Signal MOSFETAEC-Q101 QualifiedlOutlinel SOT-23VDSS50V SST3RDS(on)(Max.)2.2ID200mAPD350mW lInner circuitllFeaturesl1) Very fast switching2) Ultra low voltage drive(1.2V drive)3) AEC-Q101 Qualified4) Pb-free lead plating ; RoHS compliant.5) Halogen

 5.1. Size:195K  rohm
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RUC002N05HZGT116

1.2V Drive Nch MOSFET RUC002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T116Basic ordering unit (pieces) 3000

Datasheet: RRR040P03FRA , RSQ035P03 , RSR025P03 , RTE002P02 , RTM002P02 , RTQ020N05HZG , RTQ025P02 , RTU002P02 , P60NF06 , RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE , SCT2750NY , SCT2H12NZ , SCT3080KL , SCT3080KLHR .

Keywords - RUC002N05HZGT116 MOSFET datasheet

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