SCT2080KE MOSFET. Datasheet pdf. Equivalent
Type Designator: SCT2080KE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 262 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 106 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: TO-247
SCT2080KE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SCT2080KE Datasheet (PDF)
sct2080ke.pdf
SCT2080KE N-channel SiC power MOSFET DatasheetlOutline TO-247VDSS1200V TO-247NRDS(on) (Typ.)80mID40AlFeatures lInner circuit1) Low on-resistance(1) Gate2) Fast switching speed(2) Drain3) Fast reverse recovery (3) Source4) Easy to parallel* Body Diode5) Simple to drive6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1TO-247 TO-247N
sct20n120.pdf
SCT20N120Silicon carbide Power MOSFET: 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247Datasheet - production dataFeatures Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3(200 C)21 Very fast and robust intrinsic body diode Low ca
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
