All MOSFET. SCT2080KE Datasheet

 

SCT2080KE MOSFET. Datasheet pdf. Equivalent


   Type Designator: SCT2080KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 262 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TO-247

 SCT2080KE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SCT2080KE Datasheet (PDF)

 ..1. Size:389K  rohm
 sct2080ke.pdf

SCT2080KE SCT2080KE

SCT2080KE N-channel SiC power MOSFET DatasheetlOutline TO-247VDSS1200V TO-247NRDS(on) (Typ.)80mID40AlFeatures lInner circuit1) Low on-resistance(1) Gate2) Fast switching speed(2) Drain3) Fast reverse recovery (3) Source4) Easy to parallel* Body Diode5) Simple to drive6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1TO-247 TO-247N

 9.1. Size:493K  st
 sct20n120.pdf

SCT2080KE SCT2080KE

SCT20N120Silicon carbide Power MOSFET: 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247Datasheet - production dataFeatures Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3(200 C)21 Very fast and robust intrinsic body diode Low ca

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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