SCT2080KE PDF and Equivalents Search

 

SCT2080KE Specs and Replacement

Type Designator: SCT2080KE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 262 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm

Package: TO-247

SCT2080KE substitution

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SCT2080KE datasheet

 ..1. Size:389K  rohm
 sct2080ke.pdf pdf_icon

SCT2080KE

SCT2080KE N-channel SiC power MOSFET Datasheet lOutline TO-247 VDSS 1200V TO-247N RDS(on) (Typ.) 80m ID 40A lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lPackaging specifications*1 TO-247 TO-247N... See More ⇒

 9.1. Size:493K  st
 sct20n120.pdf pdf_icon

SCT2080KE

SCT20N120 Silicon carbide Power MOSFET 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247 Datasheet - production data Features Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3 (200 C) 2 1 Very fast and robust intrinsic body diode Low ca... See More ⇒

Detailed specifications: RSR025P03, RTE002P02, RTM002P02, RTQ020N05HZG, RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, 4N60, SCT2160KE, SCT2280KE, SCT2750NY, SCT2H12NZ, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL

Keywords - SCT2080KE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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