All MOSFET. SCT2160KE Datasheet

 

SCT2160KE Datasheet and Replacement


   Type Designator: SCT2160KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.208 Ohm
   Package: TO-247
 

 SCT2160KE substitution

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SCT2160KE Datasheet (PDF)

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SCT2160KE

SCT2160KE N-channel SiC power MOSFET DatasheetlOutlineTO-247VDSS1200VTO-247NRDS(on) (Typ.)160mID22A(3) PD165W(1) (2) lInner circuitlFeatures(1) Gate 1) Low on-resistance(2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery*1 Body Diode 4) Easy to parallel5) Simple to drivelPackaging specifications*1TO-247 TO-247N6) Pb-free

Datasheet: RTE002P02 , RTM002P02 , RTQ020N05HZG , RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , STF13NM60N , SCT2280KE , SCT2750NY , SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA .

History: MTM13123 | NP89N04PDK

Keywords - SCT2160KE MOSFET datasheet

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