SCT2160KE MOSFET. Datasheet pdf. Equivalent
Type Designator: SCT2160KE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.208 Ohm
Package: TO-247
SCT2160KE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SCT2160KE Datasheet (PDF)
..1. Size:943K rohm
sct2160ke.pdf
sct2160ke.pdf
SCT2160KE N-channel SiC power MOSFET DatasheetlOutlineTO-247VDSS1200VTO-247NRDS(on) (Typ.)160mID22A(3) PD165W(1) (2) lInner circuitlFeatures(1) Gate 1) Low on-resistance(2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery*1 Body Diode 4) Easy to parallel5) Simple to drivelPackaging specifications*1TO-247 TO-247N6) Pb-free
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
