SCT2160KE PDF and Equivalents Search

 

SCT2160KE Specs and Replacement

Type Designator: SCT2160KE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.208 Ohm

Package: TO-247

SCT2160KE substitution

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SCT2160KE datasheet

 ..1. Size:943K  rohm
 sct2160ke.pdf pdf_icon

SCT2160KE

SCT2160KE N-channel SiC power MOSFET Datasheet lOutline TO-247 VDSS 1200V TO-247N RDS(on) (Typ.) 160m ID 22A (3) PD 165W (1) (2) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications*1 TO-247 TO-247N 6) Pb-free ... See More ⇒

Detailed specifications: RTE002P02, RTM002P02, RTQ020N05HZG, RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, SCT2080KE, IRFP250, SCT2280KE, SCT2750NY, SCT2H12NZ, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL, SP8M24FRA

Keywords - SCT2160KE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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