SCT2750NY PDF and Equivalents Search

 

SCT2750NY Specs and Replacement

Type Designator: SCT2750NY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.975 Ohm

Package: TO-268-2L

SCT2750NY substitution

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SCT2750NY datasheet

 ..1. Size:833K  rohm
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SCT2750NY

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Detailed specifications: RTQ020N05HZG, RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE, 2SK3568, SCT2H12NZ, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL, SP8M24FRA, UM5K1N, UT6MA3

Keywords - SCT2750NY MOSFET specs

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