All MOSFET. SCT2750NY Datasheet

 

SCT2750NY Datasheet and Replacement


   Type Designator: SCT2750NY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.975 Ohm
   Package: TO-268-2L
 

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SCT2750NY Datasheet (PDF)

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SCT2750NY

SCT2750NYN-channel SiC power MOSFET DatasheetOutlineTO-268-2L(2) VDSS1700VRDS(on) (Typ.)750mID6APD57W(1) (3) Features Inner circuit(2)1) Low on-resistance(1) Gate2) Fast switching speed(2) Drain*13) Long creepage distance with no center lead (3) Source(1)4) Simple to drive*1 Body Diode5) Pb-free lead plating ; RoHS compliant(3)

Datasheet: RTQ020N05HZG , RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE , 5N65 , SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , UM5K1N , UT6MA3 .

History: NCE8651Q | DMT3006LPS-13 | KTK597 | CS24N40FA9H | STB12NM50N | SSF4032CH3 | SIR812DP

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