SCT2H12NZ PDF and Equivalents Search

 

SCT2H12NZ Specs and Replacement

Type Designator: SCT2H12NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-3PFM

SCT2H12NZ substitution

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SCT2H12NZ datasheet

 ..1. Size:791K  rohm
 sct2h12nz.pdf pdf_icon

SCT2H12NZ

SCT2H12NZ N-channel SiC power MOSFET Data Sheet lOutline TO-3PFM VDSS 1700V RDS(on) (Typ.) 1.15W ID 3.7A PD (3) 35W (1) (2) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Long creepage distance *1 Body Diode 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube ... See More ⇒

Detailed specifications: RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE, SCT2750NY, 10N65, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL, SP8M24FRA, UM5K1N, UT6MA3, OSG55R074HSZF

Keywords - SCT2H12NZ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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