All MOSFET. SCT2H12NZ Datasheet

 

SCT2H12NZ Datasheet and Replacement


   Type Designator: SCT2H12NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-3PFM
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SCT2H12NZ Datasheet (PDF)

 ..1. Size:791K  rohm
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SCT2H12NZ

SCT2H12NZ N-channel SiC power MOSFET Data SheetlOutlineTO-3PFMVDSS1700VRDS(on) (Typ.)1.15WID3.7APD (3) 35W(1) (2) lInner circuitlFeatures(1) Gate 1) Low on-resistance(2) Drain 2) Fast switching speed (3) Source 3) Long creepage distance *1 Body Diode 4) Simple to drive5) Pb-free lead plating ; RoHS compliantlPackaging specificationsPackaging Tube

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK833 | SVS65R280SD4 | CSFR6N70F | HGP058N08SL | IXFH110N10P | RSE002P03TL | SVG086R0NL5TR

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