All MOSFET. SCT2H12NZ Datasheet

 

SCT2H12NZ Datasheet and Replacement


   Type Designator: SCT2H12NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-3PFM
 

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SCT2H12NZ Datasheet (PDF)

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SCT2H12NZ

SCT2H12NZ N-channel SiC power MOSFET Data SheetlOutlineTO-3PFMVDSS1700VRDS(on) (Typ.)1.15WID3.7APD (3) 35W(1) (2) lInner circuitlFeatures(1) Gate 1) Low on-resistance(2) Drain 2) Fast switching speed (3) Source 3) Long creepage distance *1 Body Diode 4) Simple to drive5) Pb-free lead plating ; RoHS compliantlPackaging specificationsPackaging Tube

Datasheet: RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE , SCT2750NY , STP80NF70 , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , UM5K1N , UT6MA3 , OSG55R074HSZF .

History: OSG60R180ISF | IXFB38N100Q2 | IPP070N06NG | IPP80N06S4-05 | WSF60N06 | SI4N60-TA3-T | BUZ202

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