UM5K1N Datasheet and Replacement
Type Designator: UM5K1N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: UMT5
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UM5K1N Datasheet (PDF)
um5k1n.pdf

UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT52.01.3 0.9 Features 0.65 0.650.71) Two 2SK3018 transistors in a single UMT package. (5) (4)2) Mounting cost and area can be cut in half. (1) (2) (3)3) Low on-resistance. 1pin mark0.2 0.154) Low voltage drive (2.5V) makes this device i
um5k1n k1 sot353.pdf

TransistorSmall switching (30V, 0.1A)UM5K1NFFeatures FExternal dimensions (Units: mm)1) Two 2SK3018 transistors in a singleUMT package.2) Mounting cost and area can be cutin half.3) Low on-resistance.4) Low voltage drive (2.5V) makes thisdevice ideal for portable equipment.5) Easily designed drive circuits.FApplicationsInterfacing, switching (30V, 100mA)FEquivalent c
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3745LS | BRCS200P03DP | IRFB3004GPBF | WMB80N06TS | IXTA1N100 | LKK47-06C5 | TSM4424CS
Keywords - UM5K1N MOSFET datasheet
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History: 2SK3745LS | BRCS200P03DP | IRFB3004GPBF | WMB80N06TS | IXTA1N100 | LKK47-06C5 | TSM4424CS



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