UM5K1N Datasheet and Replacement
Type Designator: UM5K1N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: UMT5
UM5K1N Datasheet (PDF)
um5k1n.pdf

UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT52.01.3 0.9 Features 0.65 0.650.71) Two 2SK3018 transistors in a single UMT package. (5) (4)2) Mounting cost and area can be cut in half. (1) (2) (3)3) Low on-resistance. 1pin mark0.2 0.154) Low voltage drive (2.5V) makes this device i
um5k1n k1 sot353.pdf

TransistorSmall switching (30V, 0.1A)UM5K1NFFeatures FExternal dimensions (Units: mm)1) Two 2SK3018 transistors in a singleUMT package.2) Mounting cost and area can be cutin half.3) Low on-resistance.4) Low voltage drive (2.5V) makes thisdevice ideal for portable equipment.5) Easily designed drive circuits.FApplicationsInterfacing, switching (30V, 100mA)FEquivalent c
Datasheet: SCT2280KE , SCT2750NY , SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , 2N60 , UT6MA3 , OSG55R074HSZF , OSG55R140HF , OSG55R160FZF , OSG60R180FF , OSG60R180PSF , OSG60R180FSF , OSG60R180ISF .
History: VS1401ATH | AP9997AGH-HF
Keywords - UM5K1N MOSFET datasheet
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History: VS1401ATH | AP9997AGH-HF



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