STV4N100 Specs and Replacement
Type Designator: STV4N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SO10
STV4N100 substitution
- MOSFET ⓘ Cross-Reference Search
STV4N100 datasheet
Detailed specifications: STV10NA40 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , STV40N10 , 75N75 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 .
Keywords - STV4N100 MOSFET specs
STV4N100 cross reference
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STV4N100 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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