OSG65R260FSF_NB PDF and Equivalents Search

 

OSG65R260FSF_NB Specs and Replacement

Type Designator: OSG65R260FSF_NB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.3 nS

Cossⓘ - Output Capacitance: 100.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO220F

OSG65R260FSF_NB substitution

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OSG65R260FSF_NB datasheet

 0.1. Size:762K  oriental semi
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OSG65R260FSF_NB

OSG65R260FSF_NB_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R260FSF_NB , Enhancement Mode N-Channel Power MOSFET General Description OSG65R260FSF_NB... See More ⇒

 2.1. Size:966K  oriental semi
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OSG65R260FSF_NB

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 2.2. Size:963K  oriental semi
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OSG65R260FSF_NB

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Detailed specifications: OSG60R180ISF, OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, IRF830, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF

Keywords - OSG65R260FSF_NB MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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