OSG65R260FSF_NB MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R260FSF_NB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.4 nC
   trⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 100.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220F

OSG65R260FSF_NB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG65R260FSF_NB Datasheet (PDF)

0.1. Size:762K oriental semi
osg65r260fsf nb.pdf

OSG65R260FSF_NB_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R260FSF_NB , Enhancement Mode N-Channel Power MOSFET General Description OSG65R260FSF_NB

2.1. Size:966K oriental semi
osg65r260fsf-nb.pdf