OSG65R580DEF Datasheet and Replacement

   Type Designator: OSG65R580DEF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.4 nC
   tr ⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 42.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252
     - MOSFET ⓘ Cross-Reference Search