All MOSFET. OSG65R580DEF Datasheet

 

OSG65R580DEF Datasheet and Replacement


   Type Designator: OSG65R580DEF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.4 nC
   trⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 42.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252
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OSG65R580DEF Datasheet (PDF)

 ..1. Size:1158K  oriental semi
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OSG65R580DEF

 4.1. Size:1091K  oriental semi
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OSG65R580DEF

 4.2. Size:954K  oriental semi
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OSG65R580DEF

 4.3. Size:901K  oriental semi
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OSG65R580DEF

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 16N50F | 2N6656 | FDMS5672 | RU20P4C | IXTA60N20T | IRF737LC | CEB05N65

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