OSG65R580DEF Datasheet and Replacement
Type Designator: OSG65R580DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.4 nC
trⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 42.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
OSG65R580DEF Datasheet (PDF)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 16N50F | 2N6656 | FDMS5672 | RU20P4C | IXTA60N20T | IRF737LC | CEB05N65
Keywords - OSG65R580DEF MOSFET datasheet
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History: 16N50F | 2N6656 | FDMS5672 | RU20P4C | IXTA60N20T | IRF737LC | CEB05N65



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