OSG65R580DEF Datasheet. Specs and Replacement
Type Designator: OSG65R580DEF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 42.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
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OSG65R580DEF substitution
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OSG65R580DEF datasheet
Detailed specifications: OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, 3401, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF, SFG08R06DF, SFG100N08PF, SFG10S10PF
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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