OSG65R580DEF Specs and Replacement
Type Designator: OSG65R580DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 42.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
OSG65R580DEF substitution
OSG65R580DEF Specs
Detailed specifications: OSG65R1K4PF , OSG65R260FSF_NB , OSG65R290DEF , OSG65R290FEF , OSG65R290KEF , OSG65R360DTF , OSG65R380DEF , OSG65R380FEF , RU7088R , OSG65R900DTF , OSG70R600FF , OSG70R750DF , OSG80R1K4DF , OSG80R250FF , SFG08R06DF , SFG100N08PF , SFG10S10PF .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
