OSG65R580DEF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R580DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.4 nC
trⓘ - Rise Time: 16.5 nS
Cossⓘ - Output Capacitance: 42.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
OSG65R580DEF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R580DEF Datasheet (PDF)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .