All MOSFET. F501D Datasheet

 

F501D MOSFET. Datasheet pdf. Equivalent


   Type Designator: F501D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.1 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT-23

 F501D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F501D Datasheet (PDF)

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 f501d.pdf

F501D F501D

F501D 600V Depletion-Mode Power MOSFET General Features BVDSX RDS(ON),typ. IDSS Proprietary Advanced Planar Technology 600V 350 12mA Depletion Mode (Normally On) ESD improved Capability Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Synchronous Rectification Normally-

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