F501D PDF and Equivalents Search

 

F501D Specs and Replacement

Type Designator: F501D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 4.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm

Package: SOT-23

F501D substitution

- MOSFET ⓘ Cross-Reference Search

 

F501D datasheet

 ..1. Size:1434K  pipsemi
 f501d.pdf pdf_icon

F501D

F501D 600V Depletion-Mode Power MOSFET General Features BVDSX RDS(ON),typ. IDSS Proprietary Advanced Planar Technology 600V 350 12mA Depletion Mode (Normally On) ESD improved Capability Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Synchronous Rectification Normally-... See More ⇒

Detailed specifications: OSG80R250FF, SFG08R06DF, SFG100N08PF, SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, IRF540N, PIP8205-S8, PIP8205-Z6, PSA04N65B, PSA06N40, PSP06N40, PSA07N65, PSA10N60C, PSA10N65C

Keywords - F501D MOSFET specs

 F501D cross reference

 F501D equivalent finder

 F501D pdf lookup

 F501D substitution

 F501D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.