PIP8205-S8 Specs and Replacement
Type Designator: PIP8205-S8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP-8
PIP8205-S8 substitution
- MOSFET ⓘ Cross-Reference Search
PIP8205-S8 datasheet
pip8205.pdf
PIP8205 20V N-Channel MOSFET BVDSS RDS(ON),max.m RDS(ON),typ.m Test Conditions ID General Features 20 16 VGS=10V, ID=5.0A Proprietary New Trench Technology 20V V =4.5V, I =4.5A 7A 22 18 GS D Low Gate Charge Minimize Switching Loss VGS=2.5V, ID=3.0A 28 22 Fast Recovery Body Diode D1/D2 S2 S2 Applications G2 Pin 1 High efficiency ... See More ⇒
Detailed specifications: SFG08R06DF, SFG100N08PF, SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, F501D, IRF540, PIP8205-Z6, PSA04N65B, PSA06N40, PSP06N40, PSA07N65, PSA10N60C, PSA10N65C, PSA13N50
Keywords - PIP8205-S8 MOSFET specs
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History: 2SK1498 | KCY3303S | IAUC28N08S5L230 | JMSH0602AG | HY3210M | RZQ045P01TR | IAUC24N10S5L300
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