All MOSFET. PIP8205-S8 Datasheet

 

PIP8205-S8 Datasheet and Replacement


   Type Designator: PIP8205-S8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8
 

 PIP8205-S8 substitution

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PIP8205-S8 Datasheet (PDF)

 7.1. Size:5365K  pipsemi
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PIP8205-S8

PIP8205 20V N-Channel MOSFET BVDSS RDS(ON),max.m RDS(ON),typ.m Test Conditions ID General Features 20 16 VGS=10V, ID=5.0A Proprietary New Trench Technology 20V V =4.5V, I =4.5A 7A 22 18 GS D Low Gate Charge Minimize Switching Loss VGS=2.5V, ID=3.0A 28 22 Fast Recovery Body Diode D1/D2 S2 S2 Applications G2 Pin 1 High efficiency

Datasheet: SFG08R06DF , SFG100N08PF , SFG10S10PF , SFS06R03DF , SFS06R03PF , SFS06R06DF , SFS06R06PF , F501D , IRF540 , PIP8205-Z6 , PSA04N65B , PSA06N40 , PSP06N40 , PSA07N65 , PSA10N60C , PSA10N65C , PSA13N50 .

History: JMH65R980AK | AOTF298L | SPB100N06S2L-05 | AOT7S60L | L2N7002KN3T5G | AOTF18N65L | 2SK3989-01MR

Keywords - PIP8205-S8 MOSFET datasheet

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