All MOSFET. PSD04N65B Datasheet

 

PSD04N65B Datasheet and Replacement


   Type Designator: PSD04N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252
 

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PSD04N65B Datasheet (PDF)

 ..1. Size:658K  pipsemi
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PSD04N65B

PSU04N65B PSD04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G G Charger D D S SMPS Standby Power S TO-251 TO-252 Ordering Information Part Number Package Br

Datasheet: PSA10N65C , PSA13N50 , PSP13N50 , PSP06N70 , PSA06N70 , PSP10N70 , PSA10N70 , PSU04N65B , AON6414A , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 , PTA07N65B , PTA08N100 , PTA09N45 .

Keywords - PSD04N65B MOSFET datasheet

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