PSD04N65B Specs and Replacement
Type Designator: PSD04N65B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-252
PSD04N65B substitution
- MOSFET ⓘ Cross-Reference Search
PSD04N65B datasheet
psu04n65b psd04n65b.pdf
PSU04N65B PSD04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G G Charger D D S SMPS Standby Power S TO-251 TO-252 Ordering Information Part Number Package Br... See More ⇒
Detailed specifications: PSA10N65C, PSA13N50, PSP13N50, PSP06N70, PSA06N70, PSP10N70, PSA10N70, PSU04N65B, IRFB4115, PSU07N65, PSD07N65, PTA04N100, PTA04N80, PTA05N65, PTA07N65B, PTA08N100, PTA09N45
Keywords - PSD04N65B MOSFET specs
PSD04N65B cross reference
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PSD04N65B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1634 | WMR07N06TS
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