All MOSFET. PTA04N100 Datasheet

 

PTA04N100 Datasheet and Replacement


   Type Designator: PTA04N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F
 

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PTA04N100 Datasheet (PDF)

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PTA04N100

PTA04N100 1000V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 1000V 2.0 4.0A RDS(ON),typ.=2.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PT

 8.1. Size:845K  pipsemi
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PTA04N100

PTA04N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 3.7 4A RDS(ON),typ.=3.7 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT,TV/Monitor Other Applications Ordering Information Part Number Package Brand PTA04N80 TO-220F Absolute Maximum Rati

Datasheet: PSP06N70 , PSA06N70 , PSP10N70 , PSA10N70 , PSU04N65B , PSD04N65B , PSU07N65 , PSD07N65 , 2SK3878 , PTA04N80 , PTA05N65 , PTA07N65B , PTA08N100 , PTA09N45 , PTA13N45 , PTA22N60 , PTA22N65 .

History: VB162KX

Keywords - PTA04N100 MOSFET datasheet

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