PTA05N65 Datasheet. Specs and Replacement

Type Designator: PTA05N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

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PTA05N65 datasheet

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PTA05N65

PTA05N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.85 5.0A RDS(ON),typ.=1.85 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PTA... See More ⇒

Detailed specifications: PSP10N70, PSA10N70, PSU04N65B, PSD04N65B, PSU07N65, PSD07N65, PTA04N100, PTA04N80, IRFP250N, PTA07N65B, PTA08N100, PTA09N45, PTA13N45, PTA22N60, PTA22N65, PTA25N50, PTA26N60

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