PTA05N65 Datasheet. Specs and Replacement
Type Designator: PTA05N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
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PTA05N65 substitution
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PTA05N65 datasheet
pta05n65.pdf
PTA05N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.85 5.0A RDS(ON),typ.=1.85 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PTA... See More ⇒
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Detailed specifications: PSP10N70, PSA10N70, PSU04N65B, PSD04N65B, PSU07N65, PSD07N65, PTA04N100, PTA04N80, IRFP250N, PTA07N65B, PTA08N100, PTA09N45, PTA13N45, PTA22N60, PTA22N65, PTA25N50, PTA26N60
Keywords - PTA05N65 MOSFET specs
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