PTA05N65 Datasheet and Replacement
Type Designator: PTA05N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
PTA05N65 substitution
PTA05N65 Datasheet (PDF)
pta05n65.pdf
PTA05N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.85 5.0A RDS(ON),typ.=1.85 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PTA
tmpt5551 tmpt6427 tmpt6428 tmpt6429 tmpta05 tmpta06 tmpta12 tmpta13 tmpta14 tmpta20 tmpta42 tmpta43.pdf
Datasheet: PSP10N70 , PSA10N70 , PSU04N65B , PSD04N65B , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , AON7408 , PTA07N65B , PTA08N100 , PTA09N45 , PTA13N45 , PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 .
History: SL05N06A | KIA3510A-252 | SIR802DP-T1-GE3 | WMN25N70EM | MTE55N10FP | SFP830 | DH012N03I
Keywords - PTA05N65 MOSFET datasheet
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History: SL05N06A | KIA3510A-252 | SIR802DP-T1-GE3 | WMN25N70EM | MTE55N10FP | SFP830 | DH012N03I
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