All MOSFET. PTA07N65B Datasheet

 

PTA07N65B Datasheet and Replacement


   Type Designator: PTA07N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 

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PTA07N65B Datasheet (PDF)

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PTA07N65B

PTA07N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 650V 1.2 7.0A RDS(ON),typ.=1.2 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package Not to Scale P

Datasheet: PSA10N70 , PSU04N65B , PSD04N65B , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 , 7N65 , PTA08N100 , PTA09N45 , PTA13N45 , PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 .

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